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IRF1310NPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 42A TO-220AB
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Inventory: 4640
Minimum: 1
Total Price: USD $1.31
Unit Price: USD $1.306725
≥1 USD $1.306725
≥10 USD $1.072313
≥100 USD $1.039395
≥500 USD $1.00548
≥1000 USD $0.971565

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 42A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 56 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 420 mJ
Recovery Time 270 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Dimensions

Height 19.8mm
Length 10.5156mm
Width 4.69mm

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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