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SI4823DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 4.1A 8-SOIC
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Inventory: 5071
Minimum: 1
Total Price: USD $1.45
Unit Price: USD $1.45236
≥1 USD $1.45236
≥10 USD $1.192013
≥100 USD $1.154108
≥500 USD $1.1172
≥1000 USD $1.080293

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series LITTLE FOOT?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.7W Ta 2.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 18 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 108m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 40 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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