Operating Temperature -55°C~175°C TJ
Packaging Tube
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19531
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 214W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 179W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3870pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 7.2 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 105A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0088Ohm
Pulsed Drain Current-Max (IDM) 285A