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CSD19531KCS

Texas Instruments
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 100V 6.4mOhm Pwr MOSFET
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Inventory: 183
Minimum: 1
Total Price: USD $1.97
Unit Price: USD $1.96812
≥1 USD $1.96812
≥10 USD $1.578931
≥100 USD $1.299144
≥500 USD $1.099302
≥1000 USD $0.932732
≥3000 USD $0.886097

Technical Details

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON

Dimensions

Height 4.7mm
Length 10.16mm
Width 8.7mm
Thickness 4.58mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19531
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 214W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 179W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3870pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 7.2 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 105A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0088Ohm
Pulsed Drain Current-Max (IDM) 285A

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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