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IXTN110N20L2

IXYS
RoHS
RoHS RoHS compliant
Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 100A SOT-227
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Inventory: 378
Minimum: 1
Total Price: USD $46.51
Unit Price: USD $46.51416
≥1 USD $46.51416
≥10 USD $38.975864
≥100 USD $36.377345

Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series Linear L2?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish NICKEL
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Avalanche Energy Rating (Eas) 5000 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 275A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 500nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Rds On (Max) @ Id, Vgs 24m Ω @ 55A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 735W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 735W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 4

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