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IXFB100N50P

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 100A PLUS264
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Inventory: 1043
Minimum: 1
Total Price: USD $25.37
Unit Price: USD $25.371413
≥1 USD $25.371413
≥10 USD $20.817825
≥100 USD $20.167455
≥500 USD $19.517085
≥1000 USD $18.865718
≥3000 USD $16.914608

Technical Details

Supply Chain

Factory Lead Time 35 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3

Technical

Packaging Tube
Published 2005
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 49MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1890W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 5000 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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