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FQP14N30

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 300V 14.4A TO-220
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Inventory: 991
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.94248
≥1 USD $0.94248

Technical Details

Supply Chain

Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 14.4A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 147W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 147W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 7.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 145 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 14.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.29Ohm
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 57.6A
Avalanche Energy Rating (Eas) 600 mJ

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