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FDPF8N50NZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N CH MOSFET, UNITFET, 500V, 8A, TO-220F
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Inventory: 131
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Total Price: USD $1.9
Unit Price: USD $1.90344
≥1 USD $1.90344

Technical Details

Supply Chain

Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 40.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40.3W
Case Connection ISOLATED
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 34 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage 500V

Dimensions

Height 15.87mm
Length 10.16mm
Width 4.7mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON

Alternative Model

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