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TK32E12N1,S1X

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC
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Inventory: 247
Minimum: 1
Total Price: USD $1.32
Unit Price: USD $1.32132
≥1 USD $1.32132
≥10 USD $1.06297
≥100 USD $0.842411
≥500 USD $0.71403
≥1000 USD $0.581658
≥3000 USD $0.547562

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 98W Tc
Element Configuration Single
Power Dissipation 98W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.8m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 60V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 120V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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