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FQPF6N90C

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 6A TO-220F
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Inventory: 45608
Minimum: 1
Total Price: USD $3.38
Unit Price: USD $3.38352
≥1 USD $3.38352
≥10 USD $2.776043
≥100 USD $2.68926
≥500 USD $2.602478
≥1000 USD $2.515695
≥3000 USD $2.255348

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.3Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 56W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 90 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 650 mJ
Recovery Time 630 ns

Dimensions

Height 9.19mm
Length 10.16mm
Width 4.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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