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FQPF11N50CF

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 11A TO-220F
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Inventory: 2079
Minimum: 1
Total Price: USD $1.44
Unit Price: USD $1.44144
≥1 USD $1.44144

Technical Details

Supply Chain

Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series FRFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection ISOLATED
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 670 mJ

Dimensions

Height 16.07mm
Length 10.36mm
Width 4.9mm

Compliance

RoHS Status ROHS3 Compliant

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