Operating Temperature -55°C~150°C TJ
Packaging Tube
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number CSD18503
Number of Elements 1
Power Dissipation-Max 188W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 143W
Case Connection DRAIN
Turn On Delay Time 5.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 5.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0068Ohm
Drain to Source Breakdown Voltage 40V