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FQP11N40C

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 400V N-Channel Advance Q-FET
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Inventory: 1728
Minimum: 1
Total Price: USD $0.8
Unit Price: USD $0.804781
≥1 USD $0.804781
≥10 USD $0.781111
≥100 USD $0.757441
≥500 USD $0.727854

Technical Details

Supply Chain

Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 530MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 10.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Voltage 400V
Power Dissipation-Max 135W Tc
Element Configuration Single
Current 10A
Operating Mode ENHANCEMENT MODE
Power Dissipation 135W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 530m Ω @ 5.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.5A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 89 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 10.5A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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