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IRL3713PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 260A TO-220AB
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Inventory: 8973
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 250A
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5890pF @ 15V
Current - Continuous Drain (Id) @ 25°C 260A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
Rise Time 160 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 260A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 2.5 V

Dimensions

Height 9.017mm
Length 10.6426mm
Width 4.82mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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