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TSM4ND60CI C0G

Taiwan Semiconductor Corporation
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 600V 4A SINGLE N-CHANNEL POWER M
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 41.6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 582pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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