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FDP7N60NZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 O, TO-220
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Inventory: 9106
Minimum: 1
Total Price: USD $1.69
Unit Price: USD $1.689765
≥1 USD $1.689765
≥10 USD $1.386525
≥100 USD $1.343633
≥500 USD $1.299743
≥1000 USD $1.25685
≥1000 USD $1.127175

Technical Details

Supply Chain

Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series UniFET-II?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.25MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 147W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 147W
Turn On Delay Time 17.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.25 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 275 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 20.4mm
Length 10.67mm
Width 4.83mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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