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SIHB10N40D-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
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Inventory: 121
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 147W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 526pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 23A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 194 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
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