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STP6N65M2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description STMICROELECTRONICS STP6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
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Inventory: 1916
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.433971
≥1 USD $0.433971
≥10 USD $0.421207
≥100 USD $0.408444
≥500 USD $0.392489

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP6N
Number of Channels 1
Power Dissipation-Max 60W Tc
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 226pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 6.5 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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