Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 163W Tc
Element Configuration Single
Power Dissipation 163W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5193pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 161nC @ 10V
Rise Time 128ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 3 V