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FDA16N50-F109

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 16.5A TO-3P
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Inventory: 323
Minimum: 1
Total Price: USD $2.8
Unit Price: USD $2.79972
≥1 USD $2.79972
≥10 USD $2.215133
≥100 USD $1.898747
≥500 USD $1.687751
≥1000 USD $1.445136
≥3000 USD $1.360748

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation-Max 205W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 205W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1945pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16.5A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 16.5A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 66A
Avalanche Energy Rating (Eas) 780 mJ
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