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SIHP20N50E-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SIHP20N50E-GE3. MOSFET, N CHANNEL, 500V, 19A, TO220AB-3
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Inventory: 1132
Minimum: 1
Total Price: USD $1.84
Unit Price: USD $1.83876
≥1 USD $1.83876
≥10 USD $1.527372
≥100 USD $1.215337
≥500 USD $1.09725

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 179W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 184m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 100V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 42A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 204 mJ

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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