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IXTT170N10P

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel 100 V 170 A 9 mO Surface Mount Polar Power Mosfet - TO-268
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Inventory: 2700
Minimum: 1
Total Price: USD $27.34
Unit Price: USD $27.344468
≥1 USD $27.344468
≥10 USD $22.436768
≥100 USD $21.735525
≥500 USD $21.034283
≥1000 USD $20.334038
≥3000 USD $18.23031

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series Polar?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 715W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 714W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Gate Charge (Qg) (Max) @ Vgs 198nC @ 10V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 170A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 350A
Avalanche Energy Rating (Eas) 2000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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