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SI5499DC-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 8.0V 6.0A 6.2W 36mohm @ 4.5V
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Supplier Device Package 1206-8 ChipFET?

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 6.2W Tc
Element Configuration Single
Power Dissipation 2.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 4V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 8V
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±5V
Continuous Drain Current (ID) -6A
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 8V
Input Capacitance 1.29nF
Drain to Source Resistance 36mOhm
Rds On Max 36 mΩ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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