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IRFD113

Rochester Electronics, LLC
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description SMALL SIGNAL N-CHANNEL MOSFET
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Inventory: 53310
Minimum: 1
Total Price: USD $0.64
Unit Price: USD $0.63756
≥1 USD $0.63756

Technical Details

Physical

Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 800mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 0.8Ohm
DS Breakdown Voltage-Min 80V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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