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IPD60R520CPBTMA1

Rochester Electronics, LLC
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description COOLMOS N-CHANNEL POWER MOSFET
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 66W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Compliance

RoHS Status Non-RoHS Compliant

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