Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 31MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 9.6W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 9.6W
Turn On Delay Time 7.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta 15A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 54 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 66 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 7.2A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 34A
Nominal Vgs -800 mV