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BSZ120P03NS3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 30V 40A
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Inventory: 26569
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.21936
≥1 USD $0.21936
≥10 USD $0.212908
≥100 USD $0.206456
≥500 USD $0.198392

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 73μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 40A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.02Ohm
Avalanche Energy Rating (Eas) 73 mJ

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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