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BSZ050N03LSGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 16A 8-Pin TSDSON
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Inventory: 7877
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.165112
≥1 USD $0.165112
≥10 USD $0.160256
≥100 USD $0.1554
≥500 USD $0.149329

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series OptiMOS?
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 40A
Avalanche Energy Rating (Eas) 70 mJ
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