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BSP322PH6327XTSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 100V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R
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Inventory: 51438
Minimum: 1
Total Price: USD $2.82
Unit Price: USD $2.818935
≥1 USD $2.818935
≥10 USD $2.313203
≥100 USD $2.241383
≥500 USD $2.168565
≥1000 USD $2.096745
≥3000 USD $1.87929

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 4.6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 380μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 372pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 4.3 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.3 ns
Turn-Off Delay Time 21.2 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.8Ohm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.6mm
Length 6.5mm
Width 3.5mm

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