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IPB034N06L3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263
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Inventory: 2676
Minimum: 1
Total Price: USD $2.54
Unit Price: USD $2.53764
≥1 USD $2.53764
≥10 USD $2.081783
≥100 USD $2.016945
≥500 USD $1.952108
≥1000 USD $1.88727
≥3000 USD $1.69176

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V
Rise Time 78 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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