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SQM40031EL_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 40V 120A D2PAK
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Inventory: 897
Minimum: 1
Total Price: USD $1.5
Unit Price: USD $1.497437
≥1 USD $1.497437
≥10 USD $1.453394
≥100 USD $1.409352
≥500 USD $1.354299

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 21 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 39000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 800nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) -120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 300A
Max Junction Temperature (Tj) 175°C

Dimensions

Height 5.08mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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