Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? P6
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 481W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 35.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.96mA
Input Capacitance (Ciss) (Max) @ Vds 8180pF @ 100V
Current - Continuous Drain (Id) @ 25°C 77.5A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 77.5A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.041Ohm
Pulsed Drain Current-Max (IDM) 267A
Avalanche Energy Rating (Eas) 1954 mJ