Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 82A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 64 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 82A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 280A
Dual Supply Voltage 75V
Recovery Time 150 ns
Nominal Vgs 4 V