Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchMV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1262pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 47 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 44A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 250 mJ