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IPB083N15N5LFATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 105A TO263-3
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Inventory: 1111
Minimum: 1
Total Price: USD $3.06
Unit Price: USD $3.056353
≥1 USD $3.056353
≥10 USD $2.966461
≥100 USD $2.876568
≥500 USD $2.764202

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 179W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.9V @ 134μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 75V
Current - Continuous Drain (Id) @ 25°C 105A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.0083Ohm
Pulsed Drain Current-Max (IDM) 420A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 10 mJ

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