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STU16N65M5

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 12A IPAK
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Inventory: 121
Minimum: 1
Total Price: USD $0.77
Unit Price: USD $0.77054
≥1 USD $0.77054
≥10 USD $0.747877
≥100 USD $0.725214
≥500 USD $0.696885

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Base Part Number STU16N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.279Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 200 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 6.2mm
Length 6.6mm
Width 2.4mm

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