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ZXMN6A11GTA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 60V N-Chnl UMOS
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Inventory: 2968
Minimum: 1
Total Price: USD $0.66
Unit Price: USD $0.65604
≥1 USD $0.65604
≥10 USD $0.570108
≥100 USD $0.394733
≥500 USD $0.329849

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.7mm
Length 6.7mm
Height 1.65mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 120mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Drain to Source Breakdown Voltage 60V
Drain Current-Max (Abs) (ID) 3.8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4.4A
Turn-Off Delay Time 8.2 ns
Fall Time (Typ) 4.6 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 3.5 ns
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 40V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 120m Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 1.95 ns
Case Connection DRAIN
Power Dissipation 3.9W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PDSO-G4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 2.4A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 60V
Subcategory FET General Purpose Power

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