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SQ3427AEEV-T1_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 60V 6TSOP
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Inventory: 11173
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.668325
≥1 USD $0.668325
≥10 USD $0.548625
≥100 USD $0.531668
≥500 USD $0.51471
≥1000 USD $0.497753

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 95m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 24 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) -5.3A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.095Ohm
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Feedback Cap-Max (Crss) 75 pF

Dimensions

Height 1.1mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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