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PSMN015-100YLX

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description NEXPERIA - PSMN015-100YLX - MOSFET, N-CH, 100V, 69A, SOT-669-4
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Inventory: 9000
Minimum: 1500
Total Price: USD $8294.93
Unit Price: USD $5.52995
≥1500 USD $5.52995

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 195W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6139pF @ 25V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 86.3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 69A
JEDEC-95 Code MO-235
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 274A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 110 mJ

Compliance

RoHS Status ROHS3 Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Transistor Element Material SILICON

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