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SIA414DJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 8V 12A SC70-6
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Inventory: 54088
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.509723
≥1 USD $0.509723
≥10 USD $0.41895
≥100 USD $0.405983
≥500 USD $0.393015
≥1000 USD $0.37905

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6
Number of Pins 6
Transistor Element Material SILICON

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 11MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 4V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 8V
Pulsed Drain Current-Max (IDM) 40A
Nominal Vgs 800 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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