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SQJ464EP-T1_GE3

Vishay Siliconix
RoHS
/
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 32A POWERPAKSO-8
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Inventory: 11767
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.27141
≥1 USD $0.27141
≥10 USD $0.263427
≥100 USD $0.255445
≥500 USD $0.245466

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2086pF @ 30V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.017Ohm
Pulsed Drain Current-Max (IDM) 130A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 31 mJ

Physical

Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Surface Mount YES
Transistor Element Material SILICON

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