Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17322
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 6.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 14A, 8V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 695pF @ 15V
Current - Continuous Drain (Id) @ 25°C 87A Tc
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 8V
Vgs (Max) ±10V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 10.5 ns
Continuous Drain Current (ID) 87A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0124Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 104A
Avalanche Energy Rating (Eas) 54 mJ
Feedback Cap-Max (Crss) 44 pF