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SI4628DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET DI, N CH, 30V, 38A, 8SOIC
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Inventory: 19081
Minimum: 1
Total Price: USD $0.79
Unit Price: USD $0.789023
≥1 USD $0.789023
≥10 USD $0.647378
≥100 USD $0.627428
≥500 USD $0.60648
≥1000 USD $0.58653

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series SkyFET?, TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 7.8W Tc
Power Dissipation 7.8W
Turn On Delay Time 28 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 38mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 3.45nF
Drain to Source Resistance 2.4mOhm
Rds On Max 3 mΩ

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