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FQB50N06LTM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 52.4A 3-Pin(2+Tab) D2PAK T/R
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Inventory: 10203
Minimum: 1
Total Price: USD $12.69
Unit Price: USD $12.686205
≥1 USD $12.686205
≥10 USD $10.408913
≥100 USD $10.083728
≥500 USD $9.758543
≥1000 USD $9.433358

Technical Details

Supply Chain

Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 52.4A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.75W Ta 121W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.75W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 26.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52.4A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 380 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 145 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 52.4A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 990 mJ

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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