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FDMC3020DC

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 40A POWER33
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Inventory: 5986
Minimum: 1
Total Price: USD $2.9
Unit Price: USD $2.903723
≥1 USD $2.903723
≥10 USD $2.383028
≥100 USD $2.308215
≥500 USD $2.233403
≥1000 USD $2.159588

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Dual Cool?, PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 3W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.25m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 1.9V
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.00625Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 60 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 950μm
Length 3.3mm
Width 3.3mm

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 32.13mg
Transistor Element Material SILICON

Alternative Model

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