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MSC280SMA120B

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GEN2 SIC MOSFET 1200V 280MOHM TO
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3

Technical

Operating Temperature -55°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 55W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350mOhm @ 5A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 20V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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