Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series TrenchP?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 298W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 298W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 65V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 0.12A
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage -65V
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 1000 mJ