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FDMC86261P

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET PT5 150V/25V PchPower Trench Mosfet
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Inventory: 149
Minimum: 1
Total Price: USD $1.64
Unit Price: USD $1.63548
≥1 USD $1.63548
≥10 USD $1.35828
≥100 USD $1.080988
≥500 USD $0.914668
≥1000 USD $0.776087

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.3W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 75V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta 9A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 20A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Dimensions

Height 725μm
Length 3.3mm
Width 3.3mm

Alternative Model

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