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FQB8N60CTM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 600V N-Channel Adv Q-FET C-Series
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Inventory: 2465
Minimum: 1
Total Price: USD $1.69
Unit Price: USD $1.69176
≥1 USD $1.69176
≥10 USD $1.38852
≥100 USD $1.34463
≥500 USD $1.301738
≥1000 USD $1.257848

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 8A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.13W Ta 147W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Case Connection DRAIN
Turn On Delay Time 16.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 60.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 64.5 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 4.83mm

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