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BUK762R6-40E,118

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 100A D2PAK
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Inventory: 6786
Minimum: 1
Total Price: USD $1.74
Unit Price: USD $1.739527
≥1 USD $1.739527
≥10 USD $1.641062
≥100 USD $1.54817
≥500 USD $1.460542
≥1000 USD $1.377869

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 263W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 263W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7130pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Rise Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 920A
Avalanche Energy Rating (Eas) 574 mJ

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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