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SIA413ADJ-T1-GE3

Vishay Siliconix
RoHS
/
Package PowerPAK? SC-70-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SIA413ADJ-T1-GE3 MOSFET Transistor, P Channel, -12 A, -12 V, 0.024 ohm, -4.5 V
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Pricing & Ordering
Inventory: 1202
Minimum: 1
Total Price: USD $0.52
Unit Price: USD $0.521648
≥1 USD $0.521648
≥10 USD $0.506306
≥100 USD $0.490963
≥500 USD $0.471785

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6
Number of Pins 6

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 19W Tc
Power Dissipation 3.5W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 29m Ω @ 6.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 8V
Rise Time 12ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 40 ms
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -12A
Gate to Source Voltage (Vgs) 8V

Compliance

REACH SVHC Unknown
RoHS Status RoHS Compliant

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

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